| Part Number: EP600DMB | Manufacturer: Altera Corporation | NSN: 5962-01-341-5883 (5962013415883) |
| Item Name : Microcircuit Memory | CAGE Code: 67183 | FSC: 5962 Microcircuits Electronic |
The NSN Part EP600DMB Microcircuit Memory. is ready-to-ship today! Please request a quote by filling out the form. All fields are important. The NSN number for EP600DMB is 5962013415883. The manufacturer of this part is Altera Corporation. A dedicated customer service executive will contact you within 15 minutes of receiving the RFQ.
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| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-341-5883 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 013415883 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| ROM/PROM FAMILY 176 | 5 | 1 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM |
| AFGA | OPERATING TEMP RANGE | -55.0/125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/150.0 DEG CELSIUS |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 22 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-9 MIL-M-38510 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 4.00 MILLIAMPERES REVERSE CURRENT,DC ABSOLUTE |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | 600 GATE ERASABLE PROGRAMMABLE LOGIC DEVICE |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| ADAQ | BODY LENGTH | 1.280 INCHES MAXIMUM |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -2.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND HIGH PERFORMANCE AND MONOLITHIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CZEQ | TIME RATING PER CHACTERISTIC | 55.00 NANOSECONDS MAXIMUM DELAY |
| CZER | MEMORY DEVICE TYPE | PAL |
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