| Alternative NSN: 5962-01-493-4387 |
| Item Name:Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 014934387 |
| NCB Code: USA (01) |
| Manufacturers: Willard Marine Inc , Dla Land And Maritime , Atmel Corporation , Freescale Semiconductor Inc |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 12437041 | Willard Marine Inc | microcircuit memory | Avl | RFQ |
| 12437041 | Dla Land And Maritime | microcircuit memory | Avl | RFQ |
| 12437041 | Atmel Corporation | microcircuit memory | Avl | RFQ |
| AT28C010-15BM 883 | Atmel Corporation | microcircuit memory | Avl | RFQ |
| NH12437041 | Freescale Semiconductor Inc | microcircuit memory | Avl | RFQ |
| NH12437041 | Dla Land And Maritime | microcircuit memory | Avl | RFQ |
| NH12437041 | Atmel Corporation | microcircuit memory | Avl | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS" |
| AGAV | END ITEM IDENTIFICATION | TANK, ABRAMS M-1 2350-01-328-5964" |
| CQSJ | INCLOSURE MATERIAL | CERAMIC" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 80.00 MILLIAMPERES NOMINAL TOTAL SUPPLY" |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, DIGITAL MEMORY, 128K X 8 BIT EEPROM" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 6.0 VOLTS NOMINAL TOTAL SUPPLY" |
| CZEQ | TIME RATING PER CHACTERISTIC | 150.00 NANOSECONDS MAXIMUM INPUT TO OUTPUT ACCESS" |
| CZER | MEMORY DEVICE TYPE | EEPROM" |
| NHCF | NUCLEAR HARDNESS CRITICAL FEATURE | HARDENED" |
| TTQY | TERMINAL TYPE AND QUANTITY | 32 PRINTED CIRCUIT" |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS" |
| AGAV | END ITEM IDENTIFICATION | TANK, ABRAMS M-1 2350-01-328-5964" |
| CQSJ | INCLOSURE MATERIAL | CERAMIC" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 80.00 MILLIAMPERES NOMINAL TOTAL SUPPLY" |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, DIGITAL MEMORY, 128K X 8 BIT EEPROM" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 6.0 VOLTS NOMINAL TOTAL SUPPLY" |
| CZEQ | TIME RATING PER CHACTERISTIC | 150.00 NANOSECONDS MAXIMUM INPUT TO OUTPUT ACCESS" |
| CZER | MEMORY DEVICE TYPE | EEPROM" |
| NHCF | NUCLEAR HARDNESS CRITICAL FEATURE | HARDENED" |
| TTQY | TERMINAL TYPE AND QUANTITY | 32 PRINTED CIRCUIT" |
| 5905-00-000-0136 (5905000000136) |
5905-00-001-2573 (5905000012573) |
5905-00-001-2812 (5905000012812) |
5905-00-001-2813 (5905000012813) |
| 5905-00-001-2814 (5905000012814) |
5905-00-001-2815 (5905000012815) |
5905-00-001-2818 (5905000012818) |
5905-00-001-2819 (5905000012819) |
| 5905-00-001-2821 (5905000012821) |
5905-00-001-2822 (5905000012822) |
5905-00-001-2826 (5905000012826) |
5905-00-001-2827 (5905000012827) |
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