Alternative NSN: 5962-01-458-9082 |
Item Name:Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 014589082 |
NCB Code: USA (01) |
Manufacturers: Raytheon Company |
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
5095750-02-31 | Raytheon Company | microcircuit memory | Avl | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
MRC | Decoded Requirement | Clear Text Reply |
CZER | Memory Device Type | PAL |
CBBL | Features Provided | ELECTROSTATIC SENSITIVE |
CQSJ | Inclosure Material | SILICON |
CQSZ | Inclosure Configuration | FLAT PACK |
AFGA | Operating Temp Range | +0.0/+75.0 DEG CELSIUS |
CXCY | Part Name Assigned By Controlling Agency | MICROCIRCUIT, DIGITAL-EECMOS, PROGRAMMABLE ARRAY LOGIC, MONOLITHIC SILICON |
AFJQ | Storage Temp Range | -65.0/+150.0 DEG CELSIUS |
TTQY | Terminal Type And Quantity | 20 FLAT LEADS |
FEAT | Special Features | ALTERED ITEM DRAWING 82577 H8000689-0XX |
NHCF | Nuclear Hardness Critical Feature | HARDENED |
AGAV | End Item Identification | B-2 |
CZES | Hybrid Technology Type | MONOLITHIC |
CZEN | Voltage Rating And Type Per Characteristic | 4.75 VOLTS NOMINAL TOTAL SUPPLY AND 5.25 VOLTS NOMINAL TOTAL SUPPLY |
CRTL | Criticality Code Justification | CBBL |
5905-00-000-0136 (5905000000136) |
5905-00-001-2573 (5905000012573) |
5905-00-001-2812 (5905000012812) |
5905-00-001-2813 (5905000012813) |
5905-00-001-2814 (5905000012814) |
5905-00-001-2815 (5905000012815) |
5905-00-001-2818 (5905000012818) |
5905-00-001-2819 (5905000012819) |
5905-00-001-2821 (5905000012821) |
5905-00-001-2822 (5905000012822) |
5905-00-001-2826 (5905000012826) |
5905-00-001-2827 (5905000012827) |
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