Alternative NSN: 5962-01-302-0502 |
Item Name:Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 013020502 |
NCB Code: USA (01) |
Manufacturers: Cypress Semiconductor Inc , Dla Land And Maritime , Integrated Device Technology Inc |
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
5962-8403611B3A | Cypress Semiconductor Inc | microcircuit memory | Avl | RFQ |
5962-8403611B3A | Dla Land And Maritime | microcircuit memory | Avl | RFQ |
5962-8403611B3A | Integrated Device Technology Inc | microcircuit memory | Avl | RFQ |
5962-8403611B3B | Dla Land And Maritime | microcircuit memory | Avl | RFQ |
5962-8403611B3X | Cypress Semiconductor Inc | microcircuit memory | Avl | RFQ |
5962-8403611B3X | Integrated Device Technology Inc | microcircuit memory | Avl | RFQ |
5962-8403611B3X | Dla Land And Maritime | microcircuit memory | Avl | RFQ |
84036 | Integrated Device Technology Inc | microcircuit memory | Avl | RFQ |
84036 | Dla Land And Maritime | microcircuit memory | Avl | RFQ |
84036113A | Integrated Device Technology Inc | microcircuit memory | Avl | RFQ |
84036113A | Cypress Semiconductor Inc | microcircuit memory | Avl | RFQ |
84036113A | Dla Land And Maritime | microcircuit memory | Avl | RFQ |
84036113B | Dla Land And Maritime | microcircuit memory | Avl | RFQ |
84036113X | Dla Land And Maritime | microcircuit memory | Avl | RFQ |
CY6116-55LMB | Integrated Device Technology Inc | microcircuit memory | Avl | RFQ |
CY6116-55LMB | Dla Land And Maritime | microcircuit memory | Avl | RFQ |
CY6116-55LMB | Cypress Semiconductor Inc | microcircuit memory | Avl | RFQ |
IDT6116SA55L28B | Integrated Device Technology Inc | microcircuit memory | Avl | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ADAU | BODY HEIGHT | 0.060 INCHES MINIMUM AND 0.100 INCHES MAXIMUM |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | C-4 MIL-M-38510 |
CZEQ | TIME RATING PER CHACTERISTIC | 55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
ADAQ | BODY LENGTH | 0.442 INCHES MINIMUM AND 0.460 INCHES MAXIMUM |
AFJQ | STORAGE TEMP RANGE | -55.0/150.0 DEG CELSIUS |
CQZP | INPUT CIRCUIT PATTERN | 22 INPUT |
CSWJ | WORD QUANTITY | 2048 |
TTQY | TERMINAL TYPE AND QUANTITY | 28 LEADLESS |
ADAT | BODY WIDTH | 0.442 INCHES MINIMUM AND 0.460 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
AFGA | OPERATING TEMP RANGE | -55.0/125.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND W/ENABLE |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
CRHL | BIT QUANTITY | 16384 |
CTQX | CURRENT RATING PER CHARACTERISTIC | 120.00 MILLIAMPERES REVERSE CURRENT,DC ABSOLUTE |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
CQSZ | INCLOSURE CONFIGURATION | LEADLESS FLAT PACK |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
CZER | MEMORY DEVICE TYPE | RAM |
5905-00-000-0136 (5905000000136) |
5905-00-001-2573 (5905000012573) |
5905-00-001-2812 (5905000012812) |
5905-00-001-2813 (5905000012813) |
5905-00-001-2814 (5905000012814) |
5905-00-001-2815 (5905000012815) |
5905-00-001-2818 (5905000012818) |
5905-00-001-2819 (5905000012819) |
5905-00-001-2821 (5905000012821) |
5905-00-001-2822 (5905000012822) |
5905-00-001-2826 (5905000012826) |
5905-00-001-2827 (5905000012827) |
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