Alternative NSN: 5962-01-129-1910 |
Item Name:Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 011291910 |
NCB Code: USA (01) |
Manufacturers: Thales Usa Inc , Ge Aviation Systems Llc , Synertek , Intel Corporation , Fairchild Semiconductor Corporation , Telephonics Corp , National Semiconductor Corp |
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
115389-0006 | Thales Usa Inc | microcircuit memory | Avl | RFQ |
163385-02 | Ge Aviation Systems Llc | microcircuit memory | Avl | RFQ |
2114 3 883B | Synertek | microcircuit memory | Avl | RFQ |
2114-3-883B | Intel Corporation | microcircuit memory | Avl | RFQ |
F2114DMQB | Intel Corporation | microcircuit memory | Avl | RFQ |
F2114DMQB | Fairchild Semiconductor Corporation | microcircuit memory | Avl | RFQ |
F2114DMQB | Synertek | microcircuit memory | Avl | RFQ |
M235A619-1 | Telephonics Corp | microcircuit memory | Avl | RFQ |
MD2114A-5 883B | Intel Corporation | microcircuit memory | Avl | RFQ |
MD2114A-5 B | Intel Corporation | microcircuit memory | Avl | RFQ |
MD2114A-5-883B | Synertek | microcircuit memory | Avl | RFQ |
MD2114A-5-B | Synertek | microcircuit memory | Avl | RFQ |
NMC2114AJ883B | Synertek | microcircuit memory | Avl | RFQ |
NMC2114AJ883B | National Semiconductor Corp | microcircuit memory | Avl | RFQ |
NMC2114AJ883B | Intel Corporation | microcircuit memory | Avl | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.880 INCHES MINIMUM AND 0.920 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.265 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.165 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
AGAV | END ITEM IDENTIFICATION | RF4C GROUND S 99696 |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND HIGH PERFORMANCE AND HIGH RELIABILITY AND 3-STATE OUTPUT |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | METAL OXIDE-SEMICONDUCTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 12 INPUT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -3.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | RAM |
CZZZ | MEMORY CAPACITY | UNKNOWN |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 18 PRINTED CIRCUIT |
5905-00-000-0136 (5905000000136) |
5905-00-001-2573 (5905000012573) |
5905-00-001-2812 (5905000012812) |
5905-00-001-2813 (5905000012813) |
5905-00-001-2814 (5905000012814) |
5905-00-001-2815 (5905000012815) |
5905-00-001-2818 (5905000012818) |
5905-00-001-2819 (5905000012819) |
5905-00-001-2821 (5905000012821) |
5905-00-001-2822 (5905000012822) |
5905-00-001-2826 (5905000012826) |
5905-00-001-2827 (5905000012827) |
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