0N330853 Manufactured by Department Of The Army Hq United States Army Communications Research And Develop - Order Online

Part Number:  0N330853
Item Name :  microcircuit memory
CAGE Code:  56996
INC Code:  41015
Country:  USA
NCB Code:  01
FSG:  59 Electrical and Electronic Equipment Components
The NSN Part 0N330853 Microcircuit Memory is ready-to-ship today! Please request a quote by filling out the form. All fields are important. The NSN number for 0N330853 is 5962-01-187-6410. The manufacturer of this part is Department Of The Army Hq United States Army Communications Research And Develop. A dedicated customer service executive will contact you within 15 minutes of receiving the RFQ.

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Disclaimer: This is a quotation for the goods listed above. This quotation is meant as an estimate and does not reflect a final bill or invoice. All quotations are subject to change until acceptance by ASAP Semiconductor of a binding Purchase Order, and quotations may be withdrawn or revised at the sole discretion of ASAP Semiconductor. This quotation is subject to the ASAP Semiconductor Terms & Conditions available at https://www.asapsemi.com/customer-terms-and-conditions/ . All United States Government and Department of Defense bids are quoted as CAGE code 6RE77 from ASAP Semiconductor’s Anaheim, California facility. Any quotation from ASAP Semiconductor without 6RE77 is void.

NSN Information for Part Number 0N330853 with NSN 5962-01-187-6410, 5962011876410

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-187-6410

Item PartTypeName:

MICROCIRCUIT,MEMORY

59620118764100NB
CIICHCCESDPMICCriticalityENAC
UBA0
Part NumberISCRNVCRNCCHCCMSDSSADC
IM6653-1IJG595

Characteristics Data of NSN 5962-01-187-6410, 5962011876410

MRCCriteriaCharacteristic
ADAQBODY LENGTH1.350 INCHES MAXIMUM
ADATBODY WIDTH0.514 INCHES MINIMUM AND 0.526 INCHES MAXIMUM
ADAUBODY HEIGHT0.200 INCHES MAXIMUM
AFGAOPERATING TEMP RANGE-40.0/85.0 DEG CELSIUS
AFJQSTORAGE TEMP RANGE-65.0/150.0 DEG CELSIUS
CBBLFEATURES PROVIDEDHERMETICALLY SEALED AND ULTRAVIOLET ERASABLE AND PROGRAMMABLE AND HIGH SPEED AND W/TRANSPARENT LID
CQSJINCLOSURE MATERIALCERAMIC
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
CQWXOUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
CQZPINPUT CIRCUIT PATTERN13 INPUT
CWSGTERMINAL SURFACE TREATMENTSOLDER
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC11.5 VOLTS MAXIMUM POWER SOURCE
CZERMEMORY DEVICE TYPEROM
CZZZMEMORY CAPACITYUNKNOWN
TTQYTERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT

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